Part Number Hot Search : 
RF3223 SS13E 1N493 CP310 PM200 AP40N03S 5231B C1608C0G
Product Description
Full Text Search
 

To Download 1N4454 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 1N4454
FEATURES :
* High switching speed: max. 4 ns * General application * Continuous reverse voltage:max. 75 V * peak reverse voltage:max. 100 V * Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
DO - 35 Glass (DO-204AH)
0.079(2.0 )max.
1.00 (25.4) min.
Cathode Mark
0.150 (3.8) max.
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
0.020 (0.52)max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
Parameter
Maximum Reverse Voltage Maximum Peak Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current, Half wave Rectification with Resistive Load , f 50Hz (1) Maximum Surge Forward Current at t < 1s, Tj = 25 C (1) Maximum Power Dissipation
(1)
25 C ambient temperature unless otherwise specified.)
Symbol
VRRM VRM IF IF(AV) IFSM PD TJ TS
Value
75 100 200 150 0.5 500 175 -65 to + 175
Unit
V V mA mA A mW C C
Maximum Junction Temperature Storage Temperature Range
Note: (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
Electrical Characteristics (Ta = 25C unless otherwise noted)
Parameter
Reverse Current Forward Voltage Revwrse Breakdown Voltage Diode Capacitance Reverse Recovery Time
Symbol
IR VF V(BR)R Cd Trr
Test Condition
VR = 50 V VR = 75 V IF = 10 mA test with 100A pulses f = 1MHz ; VR = 0 IF = 10 mA to IR = 1mA VR = 6V , RL = 100
Min 100 -
Typ -
Max 100 5 1 2.0 4
Unit nA A V V pF ns
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( 1N4454 )
FIG. 1 ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE
800
1000
Power Disspation, PD (mW)
600
Forward Current , IF (mA)
100
10 TJ = 25C
400
1
200
0.1
0 0 100 200
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ambient Temperature , Ta (C)
Forward Voltage , VF (V)
FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERESE CURRENT VERSUS JUNCTION TEMPERATURE
1.2
104
1.0
Diode Capacitance , Cd (pF)
Reverse Current , IR (nA)
0.9 0.8
103
102
VR = 20V
0.7 f = 1MHz; 0.6 TJ = 25C
10
0.5 1 2 4 6 8 10 0 100 200
0.4 0
Reverse Voltage , VR (V)
Junction Temperature , Ta (C)
Page 2 of 2
Rev. 02 : March 25, 2005


▲Up To Search▲   

 
Price & Availability of 1N4454

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X